MIMMG200DR120B 1200v 2 0 0 a igb t module r o h s c omplia n t fea t ures ultra lo w l o ss gd series module high r u g g e dness high s hort circuit c a p a bilit y positive t e mperatur e coe f ficient w i th f a s t free-w h e e l i ng diod e s applica t ions invertor conv ertor w e lder smps and ups inductio n h eatin g absolut e maximum ra tings t c = 25c u n less other w i se specifi e d sy mbol pa rame ter t est condit i o n s v a lues unit igbt v c e s coll ector - emitter v o l t age 120 0 v v ges gate - emitter v o lt age 20 v t c = 25 c 300 a i c dc col l ector c u rrent t c = 80 c 210 a t c = 25c, t p = 1 ms 600 a i c pul s pulse d col l ect o r curre nt t c = 80c, t p = 1 ms 420 a p t o t p o w e r diss i p a tion per igb t 140 0 w t j junctio n t e mperature r a n g e -40 to +150 c t s t g s t orage t e mpe rature r a n ge -40 to +125 c v iso l insulati on t e s t v o l t age ac, t= 1min 300 0 v free-wheeling diode v rrm rep e titive rev e rse v o l t a g e 120 0 v t c = 25 c 250 a i f(a v ) a vera ge fo r w a rd curre nt t c = 80 c 170 a i f(rms) rms fo r w a rd current 250 a t j = 45c , t= 10ms, sine 186 0 a i fsm non-r e p e ti tive surge f o r w a rd c u rre nt t j = 45c, t= 8.3 ms, sine 192 0 a
MIMMG200DR120B electrical charact e r ist i cs t c = 25c unl ess other w i se specifi ed sy mbol pa rame ter t est condit i o n s min. t y p. max. unit igbt v ge( t h ) ga te - emitter t h reshold v o l t age v c e = v g e , i c = 8 ma 5 6.2 7 v i c = 200a, v g e =15v , t j = 25c 1.8 v v c e (sa t ) collector - emitter saturatio n v o l t age i c = 200a, v g e =15v , t j = 125 c 2.0 v v c e = 1200 v , v g e = 0 v , t j = 25c 0.4 1 ma i c e s coll ector l e a k age c u rrent v c e = 1200 v , v g e = 0 v , t j = 125 c 6 ma i ges gate leak age current v c e = 0 v , v g e = 20v -400 400 na q g e gate charge v c c = 600 v , i c =200a , v g e = 15v 210 0 nc c i e s input cap a cit a nce 14.9 n f c oes ou tput cap a c i t ance 1 . 04 n f c r e s revers e t ransfer cap a c i t anc e v c e = 25v , v g e = 0 v , f =1mhz 0 . 7 n f t d ( on) t u rn - on dela y t ime 125 ns t r rise t ime 60 n s t d ( o f f ) t u r n - o f f delay t i m e 420 n s t f fall t i me v c c = 600 v , i c =200a r g =5 , v g e = 15v t j = 25c inductive l o ad 60 n s t d ( on) t u rn - on dela y t ime 135 ns t r rise t ime 60 n s t d ( o f f ) t u r n - o f f delay t i m e 490 n s t f fall t i me v c c = 600 v , i c =200a r g =5 , v g e = 15v t j = 125c inductive l o ad 75 n s 17 mj e o n t u rn - on s w itc h i n g ener g y 24.8 mj 13.6 mj e o f f t u rn - o f f s w i tchin g ener g y v c c = 600 v , i c = 200a t j = 25 c r g =5 t j = 125c v g e = 15v t j = 25 c inductive l o ad t j = 125c 21.6 mj free-wheeling diode i f = 200a , v g e = 0 v , t j = 25c 2.0 2.44 v v f f o r w ard v o l t age i f = 200a , v g e = 0 v , t j = 125c 1.7 2.20 v t r r revers e reco ver y t i me 260 ns i rrm max. rev e rse recov e r y curr ent 1 10 a q r r revers e reco ver y c har ge i f = 200a , v r =800v d i f /d t= -100 0a/ s t j = 125c 13. 5 c thermal and mechanica l charac t eristics sy mbol para mete r t est condit i o n s min. t y p. max. unit r thjc junctio n -to-ca se t hermal r e sist ance per igb t 0.09 k / w r t hjcd junctio n -to-ca se t hermal r e sist ance per inverse d i ode 0.22 k / w t o rque modu le-to-si n k recomme n d e d m6 3 5 n m t o rque modu le electro des recomme n d e d m6 2.5 5 n m w e ight 285 g
MIMMG200DR120B 600 600 v ce =20v 500 500 400 400 t j =25c t j =25c i c (a) i c (a) 300 300 v c e (sa t ) v f i gure 1 . t y pic a l output charac teristics t j =125c t j =125c 200 200 100 100 0 0 0 1 1 . 5 2.5 3.5 0 v g e v f i gure 2 . t y pic a l t ransfer char acteristics 1 4 2 4 6 8 10 12 2 3 0.5 240 100 8 0 e o n e o f f ( mj ) 200 160 120 80 40 0 100 300 i c a f i gure 3 . s w itc h in g ener g y vs . collector c u rr ent v cc = 600v r g = 5 ohm v g e = 15v t j =125c e o n e o f f 700 600 500 400 200 0 4 0 6 0 2 0 0 0 5 1 0 1 5 20 25 30 e o n e o f f ( mj ) e o n e o f f r g ohm f i gure 4 . s w itc h i n g ener g y vs. gate resistor 3 5 v cc = 600v i c =200 a v g e = 15v t j =125c t ( n s ) 1 0 4 1 0 3 1 0 1 0 5 1 0 1 5 20 25 30 r g ohm figure6. s w itc h ing t i mes vs. gate resistor 3 5 v cc = 600v i c =200 a v g e =15v t j = 125 c t ( n s ) t d(on) t f t r t d ( o f f ) 1 0 2 1 0 2 0 60 180 i c a figure 5 . s w itc h in g t i mes vs. coll ector curr e n t v cc = 600v 1 0 1 120 240 300 360 420 r g = 5 ohm v g e = 15v t j =125c t d ( o f f ) t f t r t d ( o n ) 1 0 3
MIMMG200DR120B v g e =0v f=1mh z c ies 25 350 t c case t e mpera tu re ( c ) f i gure1 1. rate d curre nt vs. t c i c ( a ) t j =150c v g e 15v 0 25 0 200 150 100 50 300 250 50 7 5 125 100 150 600 0 0 200 400 600 800 100 0 120 0 v c e v f i gure 10. shor t circuit sa fe opera ti ng are a 140 0 t j =150c t c =25c v g e =15v t s c 10 s t j =25c t j = 125 c 120 0 0 180 i csc ( a ) 240 0 360 0 300 0 0 0 200 600 v c e v f i gure 9 . reve r se biase d sa fe opera ting are a 140 0 400 800 100 0 120 0 100 200 300 400 500 c ( n f ) v c e v f i gure 8 . t y pic a l cap a c i t anc e s vs. v c e v g e (v) 30 25 20 1 5 1 0 5 0 1 0.1 c res c o e s q g c f i gure 7 . ga te char ge char a c teristics 0 2.0 0 0 . 8 1.6 1.2 20 10 15 5 0.4 v cc = 600v i c =200 a t j =25c 600 700 t j =150c t c =25c v g e =15v i c p u l s ( a ) 100 1 0 3 5 600 500 400 300 i f ( a ) 200 100 0 175 v f v f i gure 12. diode fo r w a rd c h a ra cte ri sti cs 0 3 3.5 2.5 2.0 1 . 5 1. 0 0.5
MIMMG200DR120B f i gure 15. circ u i t dia gram 1 1 0 - 1 6.5 15.0 7 6 dimens i o ns in mm f i gure 16. pack age outli nes z t hjc ( k/w ) 1 8 22.0 3 4 5 1 2 2 .8 x 0 .5 6.0 6.0 48.0 62.0 8.5 30.0 30.5 m6 108.0 20.0 16.0 28.0 28.0 93.0 6.0 5 7 6 4 3 2 1 rect a n gul ar pulse d u ratio n (secon ds) f i gure 14. t ransient t hermal imped ance of diod e z t hjc ( k/w ) 1 0 - 4 1 0 - 4 1 0 - 3 1 0 - 3 1 0 - 2 1 0 - 2 1 0 - 1 1 1 1 0 - 1 1 0 - 2 1 0 - 3 1 0 - 2 1 0 - 3 1 0 - 4 1 0 - 4 dut y 0.5 0.2 0.1 0.05 single p ulse dut y 0.5 0.2 0.1 0.05 single p ulse rect a n gul ar pulse d u ratio n (secon ds) f i gure 13. t ransient t hermal imped ance of igbt 1 1 0 - 1
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